INSULATED GATE BIPOLAR TRANSISTOR
- VCES = 1200V
- VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A
Features
- UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
- New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
- Optimized for power conversion; SMPS, UPS and welding
- Industry standard TO-247AC package
Benefits
- Higher switching frequency capability than competitive IGBTs
- Highest efficiency available
- Much lower conduction losses than MOSFETs
- More efficient than short circuit rated IGBTs