2. Electronic components
  3. Actives
  4. BJT and FET
  5. Switching FETs N-channel
  6. MOSFET NC-H IRF1405 D2PAK 42A 100V

Switching FETs N-channel

Manufacturers

Specials

New FETTI SW IRF1405 D2PAK View larger

MOSFET NC-H IRF1405 D2PAK 42A 100V

IRF1310NS

10 Items

In stock

Manufacturer homepage

5,83 €

10+5,35 €

  • Drain-Source Voltage (VDS) 100 V
  • Continuous Drain Current (ID) 42 A @ 25°C
  • Pulsed Drain Current (IDM) 140 A
  • Gate Threshold Voltage (VGS 3 V
  • Gate-Source Voltage (VGS) ±20 V
  • RDS(on) (max @ VGS = 10V) 36 mΩ
  • Total Gate Charge (QG) 73.3 nC
  • Gate-Drain Charge (Qgd) 38.7 nC
  • Power Dissipation (PD) 3.8 W
  • Thermal Resistance (RthJC) 0.95 °C/W
  • Operating Temperature -55°C to +175°C
  • Package D2PAK (TO-263)
  • Technology Fifth Generation HEXFET®
ManufacturerIRF
Manufacturer's modelIRF1310NS
Operating temperature-55...+125°C
CaseD2PAK
Voltage100V
Current40A

Datasheet IRF1310

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